New infrared and other applications of narrow-gap semiconductors

Charles Thomas Elliott

doi:10.1117/12.328075

26 October 1998 New infrared and other applications of narrow-gap semiconductors

Charles Thomas Elliott

Proceedings Volume 3436, Infrared Technology and Applications XXIV; (1998) https://doi.org/10.1117/12.328075
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

The use of multilayer heterostructures based on the narrow-gap semiconductor materials InSb/InAlSb and HgCdTe is leading to a range of IR and other devices which can operate without cooling. Work in DERA will be reviewed which has demonstrated uncooled detectors out to 12 micrometer; uncooled infrared LEDs for the 3 - 12 micrometer region, employing either positive or negative luminescence; diode injection lasers with output between 3.9 micrometer and 5.1 micrometer (operating up to 150 k); and uncooled very high speed, very low voltage transistors.

Citation Download Citation

Charles Thomas Elliott "New infrared and other applications of narrow-gap semiconductors", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.328075

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