Asymmetric dark current in double-barrier quantum well infrared photodetectors

Qiandong Zhuang; Jinmin Li; Lanying Lin

doi:10.1117/12.331318

18 November 1998 Asymmetric dark current in double-barrier quantum well infrared photodetectors

Qiandong Zhuang, Jinmin Li, Lanying Lin

Proceedings Volume 3437, Infrared Spaceborne Remote Sensing VI; (1998) https://doi.org/10.1117/12.331318
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

Asymmetric dark current and photocurrent versus voltage characteristic in the Double Barrier Quantum Wells (DBQWs) photovoltaic infrared photodetector has been studied. A model based on asymmetric potential barriers was proposed. The asymmetric potential thick barrier, which due to the Si dopant segregation during growth makes a major contribution to the asymmetrical I-V characteristic, calculations based on our model agree well with experimental results. This work also confirms the potential use of this DBQWs for infrared photodetector with large responsivity and little dark current under negative bias.

Citation Download Citation

Qiandong Zhuang, Jinmin Li, and Lanying Lin "Asymmetric dark current in double-barrier quantum well infrared photodetectors", Proc. SPIE 3437, Infrared Spaceborne Remote Sensing VI, (18 November 1998); https://doi.org/10.1117/12.331318

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