Paper
22 May 1998 High-speed quantum-well optoelectronic gate based on diffusive conduction recovery
Micah B. Yairi, Christopher W. Coldren, David A. B. Miller, James S. Harris Jr.
Author Affiliations +
Proceedings Volume 3490, Optics in Computing '98; (1998) https://doi.org/10.1117/12.308903
Event: Optics in Computing '98, 1998, Bruges, Belgium
Abstract
A novel high-speed optoelectronic gate, based on electric field screening and ultrafast electrical recovery, is proposed, and demonstrated in principle with ultrathin barrier quantum wells.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Micah B. Yairi, Christopher W. Coldren, David A. B. Miller, and James S. Harris Jr. "High-speed quantum-well optoelectronic gate based on diffusive conduction recovery", Proc. SPIE 3490, Optics in Computing '98, (22 May 1998); https://doi.org/10.1117/12.308903
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KEYWORDS
Quantum wells

Absorption

Optoelectronics

Picosecond phenomena

Capacitors

Diodes

Electrodes

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