808-nm high-power semiconductor laser arrays

Baoshun Zhang; Yi Qu; Xin Gao; Baoxue Bo; Xingde Zhang

doi:10.1117/12.319653

19 August 1998 808-nm high-power semiconductor laser arrays

Baoshun Zhang, Yi Qu, Xin Gao, Baoxue Bo, Xingde Zhang

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319653
Event: Photonics China '98, 1998, Beijing, China

Abstract

In this paper, we adopted GaAlAs/GaAs SCH single quantum well wafer, which is grown by MBE, to complete one centimeter monolithic laser arrays, and two array structures were carried out on purpose to obtain cw and quasi-sw laser output respectively. In the experiment, by means of twice photoetching and chemical etching methods were used to isolate active regions to prevent photons from passing from one to another and amplified spontaneous emission. Results were presented for arrays which reach a maximum cw output power of 7 W perfacet and 50 W (200 microsecond(s) , 50 Hz) quasi-sw output, with lasing wavelength 806 - 810 nm.

Citation Download Citation

Baoshun Zhang, Yi Qu, Xin Gao, Baoxue Bo, and Xingde Zhang "808-nm high-power semiconductor laser arrays", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319653

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