Deposition of boron-carbon-nitrogen ternary thin films by ion-beam-assisted excimer ablation of B4C target

ZhongMin Ren; Yongfeng Lu; H. Q. Ni; Z. F. He; Daniel S. H. Chan; Tohsiew Low; K. R. P. Gamani; G. X. Chen; Kebin Li

doi:10.1117/12.317935

15 August 1998 Deposition of boron-carbon-nitrogen ternary thin films by ion-beam-assisted excimer ablation of B₄C target

ZhongMin Ren, Yongfeng Lu, H. Q. Ni, Z. F. He, Daniel S. H. Chan, Tohsiew Low, K. R. P. Gamani, G. X. Chen, Kebin Li

Author Affiliations +

Proceedings Volume 3550, Laser Processing of Materials and Industrial Applications II; (1998) https://doi.org/10.1117/12.317935
Event: Photonics China '98, 1998, Beijing, China

Abstract

Boron-Carbon-Nitrogen thin films were deposited by laser ablation of B₄C target under nitrogen ion-beam bombardment. The deposited thin films were set for X-ray photoelectron spectroscopy (XPS) and ellipsometry measurements. The results showed that in the ternary thin films, boron, carbon and nitrogen species were chemically bound to each other instead of simle mixtures. The B-C bonds were broken by the introduced energetic nitrogen ions and, subsequently, C-N and B-N bonds can be formed. The ellipsometry measurement gave the optical band gap of 0.48 eV for the thin films deposited under 50 eV nitrogen ion beam bombardment. According to the analyses, the nitrogen ion beam energy should be lower than 100 eV in most cases.

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ZhongMin Ren, Yongfeng Lu, H. Q. Ni, Z. F. He, Daniel S. H. Chan, Tohsiew Low, K. R. P. Gamani, G. X. Chen, and Kebin Li "Deposition of boron-carbon-nitrogen ternary thin films by ion-beam-assisted excimer ablation of B₄C target", Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); https://doi.org/10.1117/12.317935

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