Paper
7 May 1999 Process of pulsed-laser deposition of BaTiO3 ferroelectric thin films for device applications
Totka D. Kabadjova, Peter A. Atanasov, Rumen I. Tomov, Alexander N. Zherikhin, Dmitre G. Ouzounov
Author Affiliations +
Proceedings Volume 3571, Tenth International School on Quantum Electronics: Laser Physics and Applications; (1999) https://doi.org/10.1117/12.347650
Event: 10th International School on Quantum Electronics: Lasers: Physics and Applications, 1998, Varna, Bulgaria
Abstract
Thin films of BaTiO3 were deposited by KrF excimer laser ablation (248 nm) on Si substrates at different substrate temperatures and various oxygen pressures. The process of ablation of the ceramic BaTiO3 targets were investigated. The composition was measured by EDX microanalysis. The morphology and optical properties of the films were analyzed by SEM and ellipsometry respectively. The dielectric constant was estimated by LCR meter.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Totka D. Kabadjova, Peter A. Atanasov, Rumen I. Tomov, Alexander N. Zherikhin, and Dmitre G. Ouzounov "Process of pulsed-laser deposition of BaTiO3 ferroelectric thin films for device applications", Proc. SPIE 3571, Tenth International School on Quantum Electronics: Laser Physics and Applications, (7 May 1999); https://doi.org/10.1117/12.347650
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KEYWORDS
Thin films

Ferroelectric materials

Oxygen

Dielectrics

Silicon

Thin film devices

Laser ablation

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