Role of p-doping profile in InGaAsP multiquantum well lasers: comparison of simulation and experiment

Mark S. Hybertsen; Muhammad A. Alam; Gleb E. Shtengel; Gregory L. Belenky; C. Lewis Reynolds Jr.; Dmitri V. Donetsky; R. Kent Smith; Gene A. Baraff; Rudolf F. Kazarinov; James D. Wynn; L. E. Smith

doi:10.1117/12.356912

6 August 1999 Role of p-doping profile in InGaAsP multiquantum well lasers: comparison of simulation and experiment

Mark S. Hybertsen, Muhammad A. Alam, Gleb E. Shtengel, Gregory L. Belenky, C. Lewis Reynolds Jr., Dmitri V. Donetsky, R. Kent Smith, Gene A. Baraff, Rudolf F. Kazarinov, James D. Wynn, L. E. Smith

Author Affiliations +

Proceedings Volume 3625, Physics and Simulation of Optoelectronic Devices VII; (1999) https://doi.org/10.1117/12.356912
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

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Mark S. Hybertsen, Muhammad A. Alam, Gleb E. Shtengel, Gregory L. Belenky, C. Lewis Reynolds Jr., Dmitri V. Donetsky, R. Kent Smith, Gene A. Baraff, Rudolf F. Kazarinov, James D. Wynn, and L. E. Smith "Role of p-doping profile in InGaAsP multiquantum well lasers: comparison of simulation and experiment", Proc. SPIE 3625, Physics and Simulation of Optoelectronic Devices VII, (6 August 1999); https://doi.org/10.1117/12.356912

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