Process margin in ArF lithography considering process window distortion

Ichiro Okabe; Takeshi Ohfuji; Masayuki Endo; Hiroaki Morimoto

doi:10.1117/12.350271

11 June 1999 Process margin in ArF lithography considering process window distortion

Ichiro Okabe, Takeshi Ohfuji, Masayuki Endo, Hiroaki Morimoto

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350271
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

It is generally known that a highly transparent ArF resists is preferable for the bottom ARC process to maintain the vertical sidewall of resist patterns. Therefore we developed some transparent resists with a low concentration of photo acid generator. However, our careful analysis clarified that the completely transparent resist caused a serious deterioration of the exposure-defocus (E-D) process window. Therefore, there should be an optimum transparency in the ArF resists. Our experiment clarified that the medium transparency resists had the largest E-D process window. This resist produced 120 nm nested lines using an ArF stepper without any resolution enhancement technique.

Citation Download Citation

Ichiro Okabe, Takeshi Ohfuji, Masayuki Endo, and Hiroaki Morimoto "Process margin in ArF lithography considering process window distortion", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350271

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