SiON-based antireflective coating for 193-nm lithography

Patrick Schiavone; C. Esclope; A. Halimaoui

doi:10.1117/12.350160

11 June 1999 SiON-based antireflective coating for 193-nm lithography

Patrick Schiavone, C. Esclope, A. Halimaoui

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350160
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Silicon oxynitride has been shown to be an efficient antireflective materials at 365 and 248 nm. In this paper, we confirm that SiON can be used successfully at 193nm. SiON is deposited at low substrate temperature in a Plasma Enhanced Chemical Vapor Deposition reactor using silane and nitrous oxide as precursor gases. Compatibility of the silicon oxynitride underlayer with sensitive chemically amplified resist is examined. A simple surface treatment is shown to give very good results and almost completely suppresses any contamination of the chemically amplified resist.

Citation Download Citation

Patrick Schiavone, C. Esclope, and A. Halimaoui "SiON-based antireflective coating for 193-nm lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350160

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available