Fabrication of the nanocrystal structures ZrO2(y):Zr and SiO2:Si(p) by ion implantation

Oleg N. Gorshkov; D. O. Filatov; A. P. Kasatkin; V. A. Novikov; David I. Tetelbaum; Sergey A. Trushin; M. V. Stepihova

doi:10.1117/12.347432

5 May 1999 Fabrication of the nanocrystal structures ZrO₂(y):Zr and SiO₂:Si(p) by ion implantation

Oleg N. Gorshkov, D. O. Filatov, A. P. Kasatkin, V. A. Novikov, David I. Tetelbaum, Sergey A. Trushin, M. V. Stepihova

Proceedings Volume 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (1999) https://doi.org/10.1117/12.347432
Event: International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1998, St. Petersburg, Russian Federation

Abstract

Recently, nanostructural materials attract large attention. In these materials nanoparticles have a sizes from several nanometer up to several tens nanometer. Among these materials the special place belongs to materials such as metal or semi- conductor nanoinclusions (NI) in dielectric matrix, in particular, in oxides. These substances have unique electrical and optical properties (for example, due to size quantization) and can present a basis for a new class of microelectronic and optical devices. The systems with NI in oxides can be received by manufacturing oxides with excess cation components and subsequent precipitating these components. Such oxides are formed either by direct introduction of excess atoms (ions) into oxide or creation of oxygen depletion (restoration) of an initial material with stoichiometric composition. One of the basic methods of creation of such systems is ion implantation. Dioxide of silicon with NI of silicon (SiO₂:Si) and yttria stabilized zirconia (YSZ) with zirconium NI [ZrO₂ (Y):Zr] serve as examples of oxide systems with NI and are among the most promising materials of this class. The method of creation SiO₂:Si is based on ion implantation of silicon in SiO₂ and subsequent annealing. As to creation of system ZrO₂ (Y):Zr, it is necessary to note, that the irradiation of YSZ by He⁺ and Zr⁺ leads to formation NI of zirconium without subsequent annealing. In the present work some new data concerning formation and properties of the above pointed systems are presented.

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Oleg N. Gorshkov, D. O. Filatov, A. P. Kasatkin, V. A. Novikov, David I. Tetelbaum, Sergey A. Trushin, and M. V. Stepihova "Fabrication of the nanocrystal structures ZrO₂(y):Zr and SiO₂:Si(p) by ion implantation", Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); https://doi.org/10.1117/12.347432

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