Millimeter-wave generation by optical mixing in ultrafast high electron mobility transistors

Mohammed Ershad Ali; Daipayan Bhattacharya; Hernan Erlig; Harold R. Fetterman; Mehran Matloubian

doi:10.1117/12.346797

29 April 1999 Millimeter-wave generation by optical mixing in ultrafast high electron mobility transistors

Mohammed Ershad Ali, Daipayan Bhattacharya, Hernan Erlig, Harold R. Fetterman, Mehran Matloubian

Proceedings Volume 3729, Selected Papers from International Conference on Optics and Optoelectronics '98; (1999) https://doi.org/10.1117/12.346797
Event: Selected Papers from the International Conference on Optics and Optoelectronics, 1998, Dehradun, India

Abstract

A new generation of InP based 50 nm gate-length pseudomorphic high electron mobility transistors was employed in continuous wave optical mixing experiments to generate millimeter waves to extremely high frequencies. Direct radiation of optical mixed signals was demonstrated at 212 GHz. This, to our knowledge, is the highest frequency optically generated millimeter wave radiation ever reported for three terminal devices. Newly developed G-band probes and a horn antenna were used for radiation measurements. A signal to noise ratio of approximately 20 dB was obtained that indicates significant response of our devices at these frequencies. A broadband three wave detection scheme was used to further extend optical mixing to 238 and 267 GHz. Optical time domain and electrical characterization were carried out to reveal the high frequency capabilities of these devices. A photoresponse time of 6.9 psec was measured using a picosecond electrooptic sampling setup. Cut-off frequencies of 228 GHz and maximum oscillation frequencies of 124 GHz were obtained in S-parameter measurements. Specific examples of applications in communications and spectroscopy were investigated.

Citation Download Citation

Mohammed Ershad Ali, Daipayan Bhattacharya, Hernan Erlig, Harold R. Fetterman, and Mehran Matloubian "Millimeter-wave generation by optical mixing in ultrafast high electron mobility transistors", Proc. SPIE 3729, Selected Papers from International Conference on Optics and Optoelectronics '98, (29 April 1999); https://doi.org/10.1117/12.346797

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