Stress in dielectric thin films: evolution with annealing and ion implantation

Christine Mahodaux; Herve Rigneault; Laurent Gallais; Alexandre Gatto; Paul Moretti

doi:10.1117/12.360075

7 September 1999 Stress in dielectric thin films: evolution with annealing and ion implantation

Christine Mahodaux, Herve Rigneault, Laurent Gallais, Alexandre Gatto, Paul Moretti

Proceedings Volume 3738, Advances in Optical Interference Coatings; (1999) https://doi.org/10.1117/12.360075
Event: Optical Systems Design and Production, 1999, Berlin, Germany

Abstract

Stress in dense thin films deposited by Reactive Low-Voltage Ion Plating or by Ion Assisted Deposition is investigated in air and at room temperature. Ion implantation, at high energy, proves to be a way to vary and diminish the stress in thin films. Stress changes with annealing show the possibility to reducing not only stress but also optical absorption.

Citation Download Citation

Christine Mahodaux, Herve Rigneault, Laurent Gallais, Alexandre Gatto, and Paul Moretti "Stress in dielectric thin films: evolution with annealing and ion implantation", Proc. SPIE 3738, Advances in Optical Interference Coatings, (7 September 1999); https://doi.org/10.1117/12.360075

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