Printability of programmed x-ray mask defects

Hiroshi Watanabe; H. Yabe; Yukiko Kikuchi; K. Marumoto; Yasuji Matsui

doi:10.1117/12.360226

25 August 1999 Printability of programmed x-ray mask defects

Hiroshi Watanabe, H. Yabe, Yukiko Kikuchi, K. Marumoto, Yasuji Matsui

Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360226
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan

Abstract

In order to specify the sensitivity of the next generation inspection system, we investigated the printability of x-ray mask defects by using the simulator (Toolset) developed by University of Wisconsin. The defect size replicated in the resist was simulated for various exposure conditions such as exposure gap, mask contrast, and beam blur. The critical dimension (CD) errors due to mask defects were also calculated for the mask defect size, opaque and clear defects, and the mask pattern configuration. Based on these results, the critical size for 100 nm feature line-and-space (L&S) patterns was discussed and the sensitivity of defect inspection system for 100 nm feature L&S patterns is estimated to be at most 40 nm as the critical defect sizes inducing 10 nm CD error.

Citation Download Citation

Hiroshi Watanabe, H. Yabe, Yukiko Kikuchi, K. Marumoto, and Yasuji Matsui "Printability of programmed x-ray mask defects", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360226

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