Paper
25 November 1999 Six-million-pixel full-frame true 2-f CCD image sensor incorporating transparent gate technology and optional antiblooming protection
Eric J. Meisenzahl, Winchyi Chang, William Des Jardin, Stephen L. Kosman, Joseph E. Shepherd, Eric G. Stevens, Kwok Y. Wong
Author Affiliations +
Abstract
This paper describes the performance of an advanced high- resolution full-frame architecture CCD imaging device for use in scientific, medical, and other high performance monochromatic digital still imaging applications. Of particular interest is the replacement of the polysilicon second gate electrode with that of a more spectrally transparent material, thereby dramatically improving device sensitivity. This has been achieved without compromising performance in other areas such as dark current, noise, transfer efficiency and, most importantly, yield. Devices have also been produced with and without antiblooming protection depending on an application's primary need for sensitivity or control of over-exposure conditions.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric J. Meisenzahl, Winchyi Chang, William Des Jardin, Stephen L. Kosman, Joseph E. Shepherd, Eric G. Stevens, and Kwok Y. Wong "Six-million-pixel full-frame true 2-f CCD image sensor incorporating transparent gate technology and optional antiblooming protection", Proc. SPIE 3764, Ultraviolet and X-Ray Detection, Spectroscopy, and Polarimetry III, (25 November 1999); https://doi.org/10.1117/12.371090
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CITATIONS
Cited by 3 scholarly publications and 1 patent.
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KEYWORDS
Sensors

Quantum efficiency

Charge-coupled devices

Photons

CCD image sensors

Electrons

Electrodes

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