Characterization of Si nanostructured surfaces

Saleem H. Zaidi; James M. Gee; Douglas S. Ruby; Steven R. J. Brueck

doi:10.1117/12.351246

30 June 1999 Characterization of Si nanostructured surfaces

Saleem H. Zaidi, James M. Gee, Douglas S. Ruby, Steven R. J. Brueck

Proceedings Volume 3790, Engineered Nanostructural Films and Materials; (1999) https://doi.org/10.1117/12.351246
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

Surface scattering of Si to enhanced absorption particularly in the IR spectral region has been extensively investigated. Previous research chiefly examined approaches based on geometrical optics. These surface textures typically consist of pyramids with dimensions much larger than optical wavelengths. We have investigated a physical optics approach that relies on surface texture features comparable to, or smaller than, the optical wavelengths inside the semiconductor material. Light interaction at this are strongly dependent on incident polarization and surface profile. Nanoscale textures can be tuned for either narrow band, or broad band absorptive behavior. Lowest broad band reflection has been observed for triangular profiles with linewidths significantly less than 100 nm. Si nanostructures have been integrated into large (approximately 42 cm²) area solar cells. Internal quantum efficiency measurements in comparison with polished and conventionally textured cells show lower efficiency in the UV-visible (350 - 680 nm), but significantly higher IR (700 - 1200 nm) efficiency.

Citation Download Citation

Saleem H. Zaidi, James M. Gee, Douglas S. Ruby, and Steven R. J. Brueck "Characterization of Si nanostructured surfaces", Proc. SPIE 3790, Engineered Nanostructural Films and Materials, (30 June 1999); https://doi.org/10.1117/12.351246

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