Paper
8 November 1983 Semiconductor Heterojunction Devices
L. R. Tomasetta
Author Affiliations +
Proceedings Volume 0387, Technology of Stratified Media; (1983) https://doi.org/10.1117/12.934978
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States
Abstract
This paper reviews the rationale for the use of heterojunctions in devices. Through the use of specific examples, the physical properties of this powerful technique are demonstrated. Comparisons of common epitaxial growth techniques suitable for heterojunction growths are given.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. R. Tomasetta "Semiconductor Heterojunction Devices", Proc. SPIE 0387, Technology of Stratified Media, (8 November 1983); https://doi.org/10.1117/12.934978
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KEYWORDS
Gallium arsenide

Heterojunctions

Transistors

Field effect transistors

Semiconductors

Charge-coupled devices

Doping

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