Phase modulation of polariton in a GaAs quantum well waveguide

Kazuhiko Hosomi; Masataka Shirai; Toshio Katsuyama

doi:10.1117/12.369391

9 November 1999 Phase modulation of polariton in a GaAs quantum well waveguide

Kazuhiko Hosomi, Masataka Shirai, Toshio Katsuyama

Proceedings Volume 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures; (1999) https://doi.org/10.1117/12.369391
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

In order to clarify the temperature dependence of the polariton phase change under electric field, an interferometric measurement was performed. The sample was a 400-micrometers -long polariton waveguide made of GaAs/AlGaAs layers with a p-i-n structure. A 7.5 nm GaAs single-quantum well is formed at the center of the core layer. The measured phase change at a lower temperature is about 10 times larger than that at a higher temperature, and the critical temperature is around 120 K. This critical temperature is remarkably high although the damping of the polariton usually occurs at a relatively low temperature. Such a high critical temperature indicates a possibility of a polariton device operation in a relatively high-temperature region.

Citation Download Citation

Kazuhiko Hosomi, Masataka Shirai, and Toshio Katsuyama "Phase modulation of polariton in a GaAs quantum well waveguide", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); https://doi.org/10.1117/12.369391

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