Structural changes in silicon implanted by phosphorus

Igor M. Fodchuk; M. D. Raransky; O. G. Gimchinsky; V. M. Godovaniouk; L. L. Gultaj; Z. Swiatek; J. N. Bonarsky

doi:10.1117/12.370438

18 November 1999 Structural changes in silicon implanted by phosphorus

Igor M. Fodchuk, M. D. Raransky, O. G. Gimchinsky, V. M. Godovaniouk, L. L. Gultaj, Z. Swiatek, J. N. Bonarsky

Proceedings Volume 3904, Fourth International Conference on Correlation Optics; (1999) https://doi.org/10.1117/12.370438
Event: International Conference on Correlation Optics, 1999, Chernivsti, Ukraine

Abstract

Research of structural changes in subsurface layers of Si single crystals during formatting amorphous layers hidden under the surface are carried out. It established, that phosphorus ion (with 180 keV energy and doze of the order 10¹⁵ ion/cm²) implantation and subsequent short-term temperature annealing at T equals 500 degree(s)C are caused great structural changes in subsurface areas. The great strains in direction perpendicular to interface are characteristic of structures formed in this way.

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Igor M. Fodchuk, M. D. Raransky, O. G. Gimchinsky, V. M. Godovaniouk, L. L. Gultaj, Z. Swiatek, and J. N. Bonarsky "Structural changes in silicon implanted by phosphorus", Proc. SPIE 3904, Fourth International Conference on Correlation Optics, (18 November 1999); https://doi.org/10.1117/12.370438

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