Monte Carlo simulation of photoexcited electrons in AIN

Mohamed A. Osman

doi:10.1117/12.381466

28 March 2000 Monte Carlo simulation of photoexcited electrons in AIN

Mohamed A. Osman

Proceedings Volume 3940, Ultrafast Phenomena in Semiconductors IV; (2000) https://doi.org/10.1117/12.381466
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We have examined the ultrafast relaxation of electrons photoexcited by infrared laser pulses in AlN using ensemble Monte Carlo approach. The effects of doping, excitation levels, energy, and pulse duration were investigated. It is found that even at excitation energies above the G-U separation, the role of intervalley scattering is weaker compared to polar optical scattering. This is more significant at longer pulse duration.

Citation Download Citation

Mohamed A. Osman "Monte Carlo simulation of photoexcited electrons in AIN", Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); https://doi.org/10.1117/12.381466

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