Negative-tone 193-nm resists

Sungseo Cho; Anthony Vander Heyden; Jeff D. Byers; C. Grant Willson

doi:10.1117/12.388343

23 June 2000 Negative-tone 193-nm resists

Sungseo Cho, Anthony Vander Heyden, Jeff D. Byers, C. Grant Willson

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388343
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

A great deal of progress has been made in the design of single layer positive tone resists for 193 nm lithography. Commercial samples of such materials are now available from many vendors. The patterning of certain levels of devices profits from the use of negative tone resists. There have been several reports of work directed toward the design of negative tones resists for 193 nm exposure but, none have performed as well as the positive tone systems. Polymers with alicyclic structures in the backbone have emerged as excellent platforms from which to design positive tone resists for 193 nm exposure. We now report the adaptation of this class of polymers to the design of high performance negative tone 193 nm resists. New systems have been prepared that are based on a polarity switch mechanism for modulation of the dissolution rate. The systems are based on a polar, alicyclic polymer backbone that includes a monomer bearing a glycol pendant group that undergoes the acid catalyzed pinacol rearrangement upon exposure and bake to produce the corresponding less polar ketone. This monomer was copolymerized with maleic anhydride and a norbornene bearing a bis-trifluoromethylcarbinol. The rearrangement of the copolymer was monitored by FT-IR as a function of temperature. The synthesis of the norbornene monomers will be presented together with characterization of copolymers of these monomers with maleic anhydride. The lithographic performance of the new resist system will also be presented.

Citation Download Citation

Sungseo Cho, Anthony Vander Heyden, Jeff D. Byers, and C. Grant Willson "Negative-tone 193-nm resists", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388343

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available