Laser technology in the preparation of Pt/doping element/Pd/n+-GaAs contacts

Petr Machac; Vladimir Myslik; Jan Zlamal

doi:10.1117/12.373635

29 December 1999 Laser technology in the preparation of Pt/doping element/Pd/n+-GaAs contacts

Petr Machac, Vladimir Myslik, Jan Zlamal

Proceedings Volume 4016, Photonics, Devices, and Systems; (1999) https://doi.org/10.1117/12.373635
Event: Photonics Prague '99, 1999, Prague, Czech Republic

Abstract

The performance of W/Pt/doping element/Pd and Pt/doping element/Pd ohmic contacts has been investigated, where Ge, Si, and Sn were employed as doping elements. The contacts were deposited by vacuum sputtering on n⁺-GaAs substrate plates and GaAs or AlGaAs epitaxial layers, then annealed by a power YAG:Nd laser. The influence of the doping elements on the parameters for ohmic contacts was not significant, with germanium being the best, we obtained a minimum value of r_c equals 5 X 10^-6 (Omega) cm². The layers of GaAs and AlGaAs were prepared with (delta) -doping by MOVPE epitaxial growth method. The minimal values of contact resistivities of 1.1 X 10^-4 (Omega) cm² and 7.35 X (Omega) cm² were achieved.

Citation Download Citation

Petr Machac, Vladimir Myslik, and Jan Zlamal "Laser technology in the preparation of Pt/doping element/Pd/n+-GaAs contacts", Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); https://doi.org/10.1117/12.373635

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