Paper
19 July 2000 Another look at stepper lens reduction and field size
Harry J. Levinson, Paul W. Ackmann, Lori Peters, John Arnaud
Author Affiliations +
Abstract
It is possible to control linewidths on reticles over sufficiently large areas of reticles to provide benefit from increase in lens reduction. For some masking layers, the absolute control of dimensions is better for larger reticle field 5x reticles than for smaller field 4x reticles. The field size of critical layer steppers has an impact on the productivity of non-critical layer exposure tools that must be included in the determination of the overall lithography cost-of-ownership. Cost savings associated with greater lens reduction and reduced field size are greater for 200 mm than for 300 mm wafers. Results from a 7 inch mask are discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harry J. Levinson, Paul W. Ackmann, Lori Peters, and John Arnaud "Another look at stepper lens reduction and field size", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392048
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KEYWORDS
Reticles

Photomasks

Semiconducting wafers

Scanners

Lithography

Binary data

Manufacturing

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