Mask roadmap, mask technology trend, critical issues, and activities of International SEMATECH

Wallace R. Carpenter

doi:10.1117/12.392090

19 July 2000 Mask roadmap, mask technology trend, critical issues, and activities of International SEMATECH

Wallace R. Carpenter

Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392090
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan

Abstract

It is well known that the semiconductor industry continues to drive performance improvements through lithography resolution development. Further the International Technology Roadmap for Semiconductors timing continues to be driven aggressively resulting in less inherent lithography resolution advantage against the desired linewidth. The effect has been to require significantly tightened photomask specifications with aggressive timing constraints. Mask Error Enhancement Factors and wavelength choices are driving a need for multiple options for the photomask end user, which include Attenuated and Alternating Phase Shifting Masks. The compounded effect of the roadmap move-in results in extreme measures being needed to ensure the photomask infrastructure will be ready for these demands. This paper will review the changes and trends, which have occurred in the ITRS and their compounded impact to the photomask industry. Critical issues will be identified and addressed at a photomask industry level. Finally, an overview of International SEMATECH's roadmap will focus on key critical issues will be shared with the photomask industry.

Citation Download Citation

Wallace R. Carpenter "Mask roadmap, mask technology trend, critical issues, and activities of International SEMATECH", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392090

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