High efficiency tunneling-regenerated multi-active region light-emitting diodes

Xia Guo; Guangdi Shen; Guohong Wang; Jinyu Du; WeiLing Guo; Guo Gao; Wenjun Zhu; Deshu Zou

doi:10.1117/12.392139

11 July 2000 High efficiency tunneling-regenerated multi-active region light-emitting diodes

Xia Guo, Guangdi Shen, Guohong Wang, Jinyu Du, WeiLing Guo, Guo Gao, Wenjun Zhu, Deshu Zou

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392139
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

A new mechanism of tunneling-regenerated multi-active region LEDs with high quantum efficiency and high brightness has been presented. The layer structure, MOCVD growth, device technology, a several of measured curves and their analysis of these new mechanism LEDs were shown in the paper. It was theoretically and experimentally resulted in that efficiency of the electro-luminescence and the on-axis luminous intensity can linearly increase approximately with the number of active regions.

Citation Download Citation

Xia Guo, Guangdi Shen, Guohong Wang, Jinyu Du, WeiLing Guo, Guo Gao, Wenjun Zhu, and Deshu Zou "High efficiency tunneling-regenerated multi-active region light-emitting diodes", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392139

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