Analysis of characteristics of films with TiOx-TiO2 structure

Jiancheng Zhang; Tiansu Zhang; Yue Shen; Jianming Chen

doi:10.1117/12.408485

29 November 2000 Analysis of characteristics of films with TiO_x-TiO₂ structure

Jiancheng Zhang, Tiansu Zhang, Yue Shen, Jianming Chen

Author Affiliations +

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408485
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Ti was prepared on substrates by sputtering methods, then followed by an oxidization step to form TiO_x. TiO₂ films with dopents (In, Ta and Nb ions etc.) or without, could be directly coated on the surface by TiOx by a sol-gel process to obtain the films with TiO_x-TiO₂ structure. TiOx films in the oxidation process of Ti were calculated by diffusion equations and analyzed by x-ray diffraction. Crystalline phases, grain size and morphology of TiOx,-TiO₂ cross section have been observed by transmission electronic microscopy and scanning electron microscopy, respectively. Raman spectra of the films with the dopants demonstrated existence of anatase phase even in nigher temperature. The electrical properties of the films were analyzed and compared with each other. The results have been explained by transferring theory of the excitons with the structure.

Citation Download Citation

Jiancheng Zhang, Tiansu Zhang, Yue Shen, and Jianming Chen "Analysis of characteristics of films with TiO_x-TiO₂ structure", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408485

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