Nanostructure fabrication process for optoelectronic applications

Alexei A. Malinin; Victor F. Ovchinnikov; Tero H. Toivola; Charlotta J.-J. Tuovinen

doi:10.1117/12.401645

29 September 2000 Nanostructure fabrication process for optoelectronic applications

Alexei A. Malinin, Victor F. Ovchinnikov, Tero H. Toivola, Charlotta J.-J. Tuovinen

Proceedings Volume 4098, Optical Devices and Diagnostics in Materials Science; (2000) https://doi.org/10.1117/12.401645
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

Silicon nanostructures present a new class of material systems that possess electrical and optical properties different from bulk and conventional thin film structures. We present a fabrication process for devices based on silicon nanopillars. The pillars were obtained by means of self-organized gold-chromium and polystyrene sphere masks and reactive ion etching of silicon. The evolution of pillar shape during reactive ion etching was observed by scanning electron microscopy and explained by combined effect of backscattering and polymerization.

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Alexei A. Malinin, Victor F. Ovchinnikov, Tero H. Toivola, and Charlotta J.-J. Tuovinen "Nanostructure fabrication process for optoelectronic applications", Proc. SPIE 4098, Optical Devices and Diagnostics in Materials Science, (29 September 2000); https://doi.org/10.1117/12.401645

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KEYWORDS

Silicon

Photomasks

Reactive ion etching

Gold

Etching

Electroluminescence

Nanostructures

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