Optimization of plasma-deposited silicon oxinitride films for interferometric MOEMS applications

Christophe Gorecki

doi:10.1117/12.498439

7 March 2006 Optimization of plasma-deposited silicon oxinitride films for interferometric MOEMS applications

Christophe Gorecki

Proceedings Volume 4101, Laser Interferometry X: Techniques and Analysis; (2006) https://doi.org/10.1117/12.498439
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

In view of applications of SiOxNy thin films in MOEMS technology, a study the optomechanical characteristics of this material PECVD deposited are investigated. To optimize the quality of SiOxNy layers we establish the relationship between the chemical properties, optical performances, micromechanical stress, and growth parameters of deposited films. To use the SiOxNy thin film for the core layer of a strip-loaded waveguide, we propose preparation conditions of SiOxNy that offers a low-loss optical waveguide with well-controlled refractive index, based on a low-internal stress multilayer structure .

Citation Download Citation

Christophe Gorecki "Optimization of plasma-deposited silicon oxinitride films for interferometric MOEMS applications", Proc. SPIE 4101, Laser Interferometry X: Techniques and Analysis, (7 March 2006); https://doi.org/10.1117/12.498439

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