Paper
21 November 2000 Thermal treatments of CdTe and CdZnTe detectors
Kaushik Chattopadhyay, X. Ma, Jean-Olivier Ndap, Arnold Burger, Tuviah E. Schlesinger, Corin Michael R. Greaves, Howard L. Glass, J. P. Flint, Ralph B. James
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Abstract
An irreversible deterioration of CdTe and CdZnTe detectors after heat treatments in the temperature range of 150 - 200 degrees Celsius was reported by several authors; however, the nature of the processes responsible for the detector degradation and increased dark currents is not fully understood. In this study we have prepared CdTe and CdZnTe detectors equipped with Au contacts. The detectors were tested before and after thermal annealing under vacuum. Using combined measurements of current voltage characteristics, low temperature photoluminescence and nuclear spectroscopic measurements, we have attempted to differentiate between the various possible contributions to the detector degradation and elucidate the defect formation process involved.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kaushik Chattopadhyay, X. Ma, Jean-Olivier Ndap, Arnold Burger, Tuviah E. Schlesinger, Corin Michael R. Greaves, Howard L. Glass, J. P. Flint, and Ralph B. James "Thermal treatments of CdTe and CdZnTe detectors", Proc. SPIE 4141, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II, (21 November 2000); https://doi.org/10.1117/12.407595
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Cited by 20 scholarly publications.
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KEYWORDS
Sensors

Annealing

Temperature metrology

Sensor performance

Gold

Crystals

Interfaces

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