Mark William Kleinschmit,1 Mark Yeadon,2 J. Murray Gibson3
1Univ. of Illinois/Urbana-Champaign (United States) 2Institute of Materials Research and Engineering and National Univ. of Singapore (Singapore) 3Argonne National Lab. (United States)
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Oxide mediated epitaxy and related techniques have shown promise as candidates for the production of high quality epitaxial CoSi2 on Si(001). The mechanisms governing the success of these techniques are still not clear, however. We present microstructural observations of the formation of CoSi2 on both the clean and oxidized Si(001) surface. Our observations were made using a UHV transmission electron microscope with in-situ MBE capability.
Mark William Kleinschmit,Mark Yeadon, andJ. Murray Gibson
"Epitaxial CoSi2 on Si(100) by oxide-mediated epitaxy", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405377
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Mark William Kleinschmit, Mark Yeadon, J. Murray Gibson, "Epitaxial CoSi2 on Si(100) by oxide-mediated epitaxy," Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405377