Dissolution performance of device pattern with low-impact development

Shinichi Ito; Kei Hayasaki; Hiroko Nakamura

doi:10.1117/12.436900

24 August 2001 Dissolution performance of device pattern with low-impact development

Shinichi Ito, Kei Hayasaki, Hiroko Nakamura

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436900
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

For low-k1 lithography, high accurate control of the development process is required. For that purpose, low- impact dispensing is one of the most effective approaches. In that process, development time differs between start and end position of nozzle-scan. To reduce the time lag, the nozzle-scan-speed of 140mm/s was selected. But critical dimensions (CD) offset that depends on scan-direction was detected. From the results of the CD and dissolution performances for three resists, we found that the pull-back flow of the developer was the main cause of the CD offset. Thus, it is important that the developer does not flow by its pull-back-force. By observing and analyzing the flow of the dissolution product with a video camera, the best condition of the scan-speed (=60 mm/s) was selected. Under this nozzle-scan condition, the dissolution rates did not depend on the scan-direction of the dispenser-nozzle. As a result, the small CD offset could be observed for 200nm L&S patterns.

Citation Download Citation

Shinichi Ito, Kei Hayasaki, and Hiroko Nakamura "Dissolution performance of device pattern with low-impact development", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436900

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