CD control for two-dimensional features in future technology nodes

Staf Verhaegen; Ronald L. Gordon; Rik M. Jonckheere; Martin McCallum; Kurt G. Ronse

doi:10.1117/12.435736

14 September 2001 CD control for two-dimensional features in future technology nodes

Staf Verhaegen, Ronald L. Gordon, Rik M. Jonckheere, Martin McCallum, Kurt G. Ronse

Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435736
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

A methodology will be presented to use a state-of-the art lithographic simulator to simulate 2D mask patterns and to look at the impact of exposure dose, focus, local reticle CD error and aberrations. This methodology will be applied to a few isolated patterns and a few dense(r) patterns with 1 to 3 aspect ratio line segments. Two line-widths will be simulated with the accompanying illumination condition (130nm with annular and 100nm with quadrupole illumination) with 193nm wavelength and the results will be presented in this paper.

Citation Download Citation

Staf Verhaegen, Ronald L. Gordon, Rik M. Jonckheere, Martin McCallum, and Kurt G. Ronse "CD control for two-dimensional features in future technology nodes", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435736

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