CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 4346 > Article
Paper
14 September 2001 Characterization of linewidth variation on 248- and 193-nm exposure tools
Allen H. Gabor, Timothy A. Brunner, Jia Chen, Norman Chen, Sadanand Deshpande, Richard A. Ferguson, David V. Horak, Steven J. Holmes, Lars W. Liebmann, Scott M. Mansfield, Antoinette F. Molless, Christopher J. Progler, Paul A. Rabidoux, Deborah Ryan, Peter Talvi, Len Tsou, Ben R. Vampatella, Alfred K. K. Wong, Qingyun Yang, Chienfan Yu
Author Affiliations +
Proceedings Volume 4346, Optical Microlithography XIV; (2001) https://doi.org/10.1117/12.435708
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States
Abstract
The line-width variation of a 193 nm lithographic process utilizing a 0.60 NA scanner and a binary reticle is compared to that of a 248 nm lithographic processes utilizing a 0.68 NA scanner and a variety of reticle technologies. These include binary, attenuated PSM with assist features and alternating PSM reticles. Despite the fact that the 193 nm tool has a lower NA and that the data was generated using a binary reticle, the 193 nm lithographic process allows for the line-width values to be pushed lower than previously achieved with 248 nm lithographic processes. The 3-sigma values from 4000 electrical line-width measurements per wafer (160 measurements per 25*25 mm field, 25 fields per wafer) were calculated for different mask features. The 193 nm process was capable of reaching line-widths needed for future generations of advance logic chips. Compared to the 193 nm process utilizing a binary reticle, only the 248 nm processes utilizing either an attenuated PSM with assist features or an alternating PSM reticle had similarly low line-width variation. The 248 nm processes utilizing a binary reticle had higher line-width variation even at larger poly gate conductor line-widths.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Allen H. Gabor, Timothy A. Brunner, Jia Chen, Norman Chen, Sadanand Deshpande, Richard A. Ferguson, David V. Horak, Steven J. Holmes, Lars W. Liebmann, Scott M. Mansfield, Antoinette F. Molless, Christopher J. Progler, Paul A. Rabidoux, Deborah Ryan, Peter Talvi, Len Tsou, Ben R. Vampatella, Alfred K. K. Wong, Qingyun Yang, and Chienfan Yu "Characterization of linewidth variation on 248- and 193-nm exposure tools", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435708
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 6 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Reticles
Semiconducting wafers
Binary data
Lithography
Scanning electron microscopy
Critical dimension metrology
Photomasks
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top