Paper
22 February 2001 Bandgap of (CdTe)m/(Cd1-xMnxTe)n superlattices
S. V. Melnichuk, Ya. I. Mikhailevski, Ilary M. Rarenko, I. M. Yurijchuk
Author Affiliations +
Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417807
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
Band structure of [100] (CdTe)m/(Cd1-xMnxTe)n superlattices is calculated theoretically in dependence of semiconductor CdTe and Cd1-xMnxTe layers width and magnetic component concentration. Calculations are carried out within semiempirical tight-binding method, which includes s-, p-orbitals of each atom and cation d-orbitals. Mn 3d-states contribution to the formation of the superlattice energy spectrum is analyzed. It is shown that a superlattice on the base of diluted magnetic semiconductor Cd1-xMnxTe with small width of CdTe layers is a semiconductor materials with the similar magnetic properties but with more complicated dependence of crystal forbidden band gap on magnetic component concentration.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. V. Melnichuk, Ya. I. Mikhailevski, Ilary M. Rarenko, and I. M. Yurijchuk "Bandgap of (CdTe)m/(Cd1-xMnxTe)n superlattices", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417807
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KEYWORDS
Superlattices

Semiconductors

Magnetic semiconductors

Magnetism

Manganese

Crystals

Chemical species

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