Paper
20 April 2001 Etch selectivity of a wet chemical formulation for premetal cleaning
Jeremy W. Epton, Deborah L. Jarrett, Ian J. Doohan
Author Affiliations +
Proceedings Volume 4405, Process and Equipment Control in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425245
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
Abstract
This paper examines the relative etching rates of doped and thermal silicon dioxide when using NSSL etchant, comprising of a mixture of ammonium fluoride, water and ammonium dihydrogen phosphate [(NH4)H2PO4] and investigates their dependence on both temperature and mixture composition. The possible reaction mechanism is discussed and compared with the known mechanism for standard buffered oxide etchants (BOE). The observed etch selectivity and mechanisms of BOE and NSSL are also compared with the behavior of a third chemical formulation, referred to as mixed oxide etchant, which comprises of ammonium fluoride (NH4F) solution, diammonium hydrogen phosphate [(NH4)2HPO4] and orthophosphoric acid (H3PO4). It is concluded that no major change in oxide selectivity is observed if either BOE or NSSL etchants are used in the metal pre-clean process.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeremy W. Epton, Deborah L. Jarrett, and Ian J. Doohan "Etch selectivity of a wet chemical formulation for premetal cleaning", Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); https://doi.org/10.1117/12.425245
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KEYWORDS
Etching

Oxides

Semiconducting wafers

Silica

Hydrogen

HF etching

Chemical reactions

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