Photosensitive structures using Hg1-xCdxTe solid solutions grown by molecular beam epitaxy

Aleksander V. Voitsekhovskii; Andrej P. Kokhanenko; N. A. Koulchitskii

doi:10.1117/12.425460

17 April 2001 Photosensitive structures using Hg_1-xCd_xTe solid solutions grown by molecular beam epitaxy

Aleksander V. Voitsekhovskii, Andrej P. Kokhanenko, N. A. Koulchitskii

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425460
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

Parameters of Hg_1-xCd_xTe epitaxial structures produced by molecular beam epitaxy are presented. Results of measurements of the carrier recombination lifetime, sensitivity and the noise voltage of photosensitive elements have been studied. A high detectivity was obtained over a broad wavelength range.

Citation Download Citation

Aleksander V. Voitsekhovskii, Andrej P. Kokhanenko, and N. A. Koulchitskii "Photosensitive structures using Hg_1-xCd_xTe solid solutions grown by molecular beam epitaxy", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425460

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