Stoichiometry of DC sputtered WO3

Peter A. Sieck; Kyle Hukari; Joe Countrywood; Vladimir Kodash

doi:10.1117/12.448259

13 November 2001 Stoichiometry of DC sputtered WO₃

Peter A. Sieck, Kyle Hukari, Joe Countrywood, Vladimir Kodash

Proceedings Volume 4458, Solar and Switching Materials; (2001) https://doi.org/10.1117/12.448259
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Thin films of WO₃ were deposited by DC magnetron sputtering at different oxygen partial pressures and different target surface oxidation states. Evaluation of the film properties was carried out using electrochemical and optical techniques. Electrochromic coloration efficiency is compared over a range of injected charge. Methods for determining the stoichiometry of the films are suggested. Excess electrochemically injected charge in the WO₃ films is quantified and related to super-stoichiometry. Absorption measured in the as-deposited films is quantified and related to sub-stoichiometry. Deposition rate is an important consideration in the development of cost models for production of electrochromic devices. For many types of dielectric thin films deposited in in-line sputtering systems, the only concern is the onset of optical absorption. For WO₃, many other aspects of the films' behavior may be affected. In this paper, ways to evaluate stoichiometry are examined in an effort to better understand the effect of changing process parameters on the films.

Citation Download Citation

Peter A. Sieck, Kyle Hukari, Joe Countrywood, and Vladimir Kodash "Stoichiometry of DC sputtered WO₃", Proc. SPIE 4458, Solar and Switching Materials, (13 November 2001); https://doi.org/10.1117/12.448259

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