Paper
14 November 2001 Absolute EUV yield of laser-irradiated Xe-clusters dependent on pulse width
Peter Viktor Nickles, Matthias Schnuerer, Holger Stiel, Ulrich Vogt, Sarkis A. Ter-Avetisyan, Wolfgang Sandner
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Abstract
Large Xe-clusters have been excited with 50 fs and 2 ps pulses from a Ti:Sa multi - TW laser at 800 nm wavelength. Additionally a 10 ns Nd:YAG laser at 1064 nm wavelength was used to heat Xe-cluster/gas and a liquid Xe-spray target. Absolute yield measurements of EUV-emission in a wavelength range between 10 nm and 15 nm in combination with target variations were carried out. The ps-laser pulse has resulted in about 30 percent enhanced and spatially more uniform EUV-emission compared to fs-laser excitation. Similar emission has been obtained with ns-pulse exposure of different target modifications which also act back to the EUV-source size. Absolute emission efficiencies at 13.4 nm of up to 0.8 percent in 2pi sr and 2.2 percent bandwidth were measured.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Viktor Nickles, Matthias Schnuerer, Holger Stiel, Ulrich Vogt, Sarkis A. Ter-Avetisyan, and Wolfgang Sandner "Absolute EUV yield of laser-irradiated Xe-clusters dependent on pulse width", Proc. SPIE 4504, Applications of X Rays Generated from Lasers and Other Bright Sources II, (14 November 2001); https://doi.org/10.1117/12.448455
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KEYWORDS
Xenon

Picosecond phenomena

Plasma

Pulsed laser operation

Absorption

Extreme ultraviolet

Ionization

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