Spectroscopic ellipsometry investigation of influence of high-pressure high-temperature process on optical properties of SiO2-Si structures

Witold Rzodkiewicz; Andrzej Kudla; Andrzej Misiuk; Stanislaw Lasisz

doi:10.1117/12.435963

10 August 2001 Spectroscopic ellipsometry investigation of influence of high-pressure high-temperature process on optical properties of SiO₂-Si structures

Witold Rzodkiewicz, Andrzej Kudla, Andrzej Misiuk, Stanislaw Lasisz

Author Affiliations +

Proceedings Volume 4517, Lightmetry: Metrology, Spectroscopy, and Testing Techniques Using Light; (2001) https://doi.org/10.1117/12.435963
Event: Lightmetry, 2000, Pultusk, Poland

Abstract

In this paper, spectroscopic ellipsometry (SE) has been used to investigate SiO₂-Si structures, which were subjected to annealing under a high hydrostatic pressure at high temperature (HPHT) processes. Temperature and pressure varied from 450 degrees Celsius to 1280 degrees Celsius and from 10⁵ Pa to 1.2 GPa, respectively. Investigations have been carried out by variable angle spectroscopic ellipsometer VASE of J.A. Woollam Co Inc. Using the standard optical model of the SiO₂-Si structure, no satisfying fit of measured and calculated (Psi) and (Delta) ellipsometric parameters characteristics can be obtained. This inconsistency, expressed by the MSE parameter (Mean Squared Error), is proportional to temperature, pressure and time of the HPHT process. Elongated convexities on SiO₂ surface have been observed by scanning electron microscope (SEM). It was found that depolarization effect takes place as a result of non-uniformity of either chemical composition or SiO₂ film thickness. A model consisting of upper SiO₂ surface roughness, SiO₂ layer and SiO₂-Si interface has been used for data analysis. Application of this model allowed determination of changes in thickness and refractive index of SiO₂ as a result of the HPHT process. An increase of refractive index and decrease of layer thickness can be ascribed to excessive stress in SiO₂ layer. This stress has been probably caused by densification of silicon dioxide.

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Witold Rzodkiewicz, Andrzej Kudla, Andrzej Misiuk, and Stanislaw Lasisz "Spectroscopic ellipsometry investigation of influence of high-pressure high-temperature process on optical properties of SiO₂-Si structures", Proc. SPIE 4517, Lightmetry: Metrology, Spectroscopy, and Testing Techniques Using Light, (10 August 2001); https://doi.org/10.1117/12.435963

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