CO2 laser doping of Si layers with use of B2O3 as an effective procedure for increasing the sensitivity of detectors in security systems

Wladyslaw Proszak; Olexander Bonchyk; Stepan Kiyak; Zenon Gotral

doi:10.1117/12.438441

24 August 2001 CO₂ laser doping of Si layers with use of B₂O₃as an effective procedure for increasing the sensitivity of detectors in security systems

Wladyslaw Proszak, Olexander Bonchyk, Stepan Kiyak, Zenon Gotral

Author Affiliations +

Proceedings Volume 4535, Optical Sensing for Public Safety, Health, and Security; (2001) https://doi.org/10.1117/12.438441
Event: Systems of Optical Security, 2000, Warsaw, Poland

Abstract

This paper presents results of researches related with solid state doping of Si layers with use CO2 laser irradiation and B203 dopant. Unique properties of laser doping process let us create 10-100 nm doped layers of repeatable parameters.

Citation Download Citation

Wladyslaw Proszak, Olexander Bonchyk, Stepan Kiyak, and Zenon Gotral "CO₂ laser doping of Si layers with use of B₂O₃as an effective procedure for increasing the sensitivity of detectors in security systems", Proc. SPIE 4535, Optical Sensing for Public Safety, Health, and Security, (24 August 2001); https://doi.org/10.1117/12.438441

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