Electroluminescence from InAsSb quantum dot light-emitting diodes grown by liquid phase epitaxy

Anthony Krier; Xing-Ling Huang

doi:10.1117/12.470576

12 June 2002 Electroluminescence from InAsSb quantum dot light-emitting diodes grown by liquid phase epitaxy

Anthony Krier, Xing-Ling Huang

Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470576
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Electroluminescence is reported for the first time from InAs_0.75Sb_0.25 quantum dot light emitting diodes. The quantum dots were grown from the liquid phase at 590 degree(s)C on an InAs (100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4K and 250 mA injection current, three transitions were identified, centered at 4.01, 3.80 and 3.63micrometers , associated with the sp, p and d states of the confined holes inside the quantum dot. Each of the transitions exhibits a blue shift with increasing injection current, but the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The quantum dot electroluminescence was observed to persist up to room temperature.

Citation Download Citation

Anthony Krier and Xing-Ling Huang "Electroluminescence from InAsSb quantum dot light-emitting diodes grown by liquid phase epitaxy", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); https://doi.org/10.1117/12.470576

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