Negative-tone CAR resists for e-beam lithography: modification of chemical composition for R&D application (high resolution) or production application (high sensitivity)

Murielle Charpin; Laurent Pain; Serge V. Tedesco; C. Gourgon; A. Andrei; Daniel Henry; Yves LaPlanche; Ryotaro Hanawa; Tadashi Kusumoto; Masumi Suetsugu; H. Yokoyama

doi:10.1117/12.474193

24 July 2002 Negative-tone CAR resists for e-beam lithography: modification of chemical composition for R&D application (high resolution) or production application (high sensitivity)

Murielle Charpin, Laurent Pain, Serge V. Tedesco, C. Gourgon, A. Andrei, Daniel Henry, Yves LaPlanche, Ryotaro Hanawa, Tadashi Kusumoto, Masumi Suetsugu, H. Yokoyama

Author Affiliations +

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474193
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

In this study, it is investigated how chemical modifications of a given resist platform can induce improvements in e-beam lithographic performances. Molecular weight (Mw) as well as photo-acid generator (PAG) modifications will act as fine tuners for Sumitomo NEB-33 negative resist to match specific applications: preparation of advanced CMOS R&D architecture (highly resolving resists needed) and fast patterning for production environment (highly sensitive resists needed).

Citation Download Citation

Murielle Charpin, Laurent Pain, Serge V. Tedesco, C. Gourgon, A. Andrei, Daniel Henry, Yves LaPlanche, Ryotaro Hanawa, Tadashi Kusumoto, Masumi Suetsugu, and H. Yokoyama "Negative-tone CAR resists for e-beam lithography: modification of chemical composition for R&D application (high resolution) or production application (high sensitivity)", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474193

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