Novel development method for CD control: optimized spin-off development method

Kazuo Sakamoto; Akira Nishiya; Kentarou Yamamura; Takahisa Otsuka

doi:10.1117/12.474279

24 July 2002 Novel development method for CD control: optimized spin-off development method

Kazuo Sakamoto, Akira Nishiya, Kentarou Yamamura, Takahisa Otsuka

Author Affiliations +

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474279
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

A loading effect in particular is accounting for an increasing percentage of factors responsible for CD variations. A multi-puddle method in development process therefore is considered a solution of this problem. However, the method consumes large amounts of developer solution. In this paper, we have studied the influence of loading effect on CD and evaluated several development methods to minimize the influence. In this paper, we evaluated the correlation between the width of exposed area and CD in the device area. Based on this result, we estimated the diffusion range of dissolution products. We also found another phenomenon that CD uniformity within a wafer became worse when each pattern was surrounded by an unexposed area. A novel development method we have evaluated in this study is as follows: (1) perform a puddle formation normally; (2) after a short static development, spin off developer solution from the puddle; and (3) after the puddle is decreased in volume, perform a rather long static development. This new method proved to have the capability of minimizing the influence of dissolution products.

Citation Download Citation

Kazuo Sakamoto, Akira Nishiya, Kentarou Yamamura, and Takahisa Otsuka "Novel development method for CD control: optimized spin-off development method", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474279

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KEYWORDS

Critical dimension metrology

Semiconducting wafers

Cadmium

Diffusion

Liquids

Optical lithography

Deep ultraviolet

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