Hybrid PPC methodology and implementation in the correction of etch proximity

Chul-Hong Park; Sang-Uhk Rhie; Soo-Han Choi; Dong-Hyun Kim; Ji-Soong Park; Yoo-Hyon Kim; Moon-Hyun Yoo; Jeong-Taek Kong

doi:10.1117/12.474586

30 July 2002 Hybrid PPC methodology and implementation in the correction of etch proximity

Chul-Hong Park, Sang-Uhk Rhie, Soo-Han Choi, Dong-Hyun Kim, Ji-Soong Park, Yoo-Hyon Kim, Moon-Hyun Yoo, Jeong-Taek Kong

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474586
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

In the exponential drive to go to the smaller feature size, the control of the line width variation becomes more important than ever before. Hybrid PPC (Process Proximity Correction) has been one of the indispensable methods to satisfy the requirements of CD control and yield improvement. In this paper, an effective methodology for hybrid PPC is presented to reduce the data volume and the complexity of patterns and to enhance the accuracy of correction. The selective engine in the hybrid PPC flow classifies the gate patterns into the areas of model-based and rule-based PPC considering a device performance, a modeling accuracy, and the extension of the contact overlap margin. The effective method of edge pattern modeling is exploited to compensate the nonlinear etch proximity effect in the asymmetrical pattern configuration. Using the hybrid PPC method with the 1 nm correction grid, 22% of the additional reduction in the intra-die CD variation compared to the rule-based PPC with 5 nm correction grid has been achieved.

Citation Download Citation

Chul-Hong Park, Sang-Uhk Rhie, Soo-Han Choi, Dong-Hyun Kim, Ji-Soong Park, Yoo-Hyon Kim, Moon-Hyun Yoo, and Jeong-Taek Kong "Hybrid PPC methodology and implementation in the correction of etch proximity", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474586

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