Paper
29 May 2002 Nonlinear susceptibilities of AIIIBV semiconductors in far-infrared and microwave range
E. V. Moisseenko, Andrey V. Shepelev
Author Affiliations +
Proceedings Volume 4748, ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures; (2002) https://doi.org/10.1117/12.468965
Event: XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001), 2001, Minsk, Belarus
Abstract
An approach to calculation of nonlinear susceptibilities of semiconductors in far infrared and microwave range based on account of interaction of free carries with intrinsic excitations of semiconductors and ionized impurities is developed. Numerical dependencies of real part of third order non-linear susceptibility on frequency, temperature and concentration of impurities for a set of semiconductors are obtained.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. V. Moisseenko and Andrey V. Shepelev "Nonlinear susceptibilities of AIIIBV semiconductors in far-infrared and microwave range", Proc. SPIE 4748, ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures, (29 May 2002); https://doi.org/10.1117/12.468965
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KEYWORDS
Semiconductors

Scattering

Phonons

Microwave radiation

Dielectrics

Gallium arsenide

Far infrared

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