Paper
30 May 2002 Influence of photoinduced electronic processes on second-harmonic generation at reflection from a silicon surface: transversal Dember's effect
I. M. Baranova, K N. Evtyukhov, A. N. Muravyev
Author Affiliations +
Abstract
The electronic processes stimulated by laser pulses in an internal part of the weakly absorbing semiconductor (SC) are theoretically investigated. The physical and mathematical model of diffusive-drift and relaxational electronic processes called by infinite sequence of nanosecond laser pulses is offered. It is shown, that a consequent of these processes is the transversal Dember's effect - originating of a radial field both potential differences between lighted and unlighted parts of a volume of the SC. The calculation show, that in silicon the transversal Dember's potential difference is commensurable with representative values of a surface potential and, therefore, plays an essential role in nonlinear - optical processes on a surface of the SC.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. M. Baranova, K N. Evtyukhov, and A. N. Muravyev "Influence of photoinduced electronic processes on second-harmonic generation at reflection from a silicon surface: transversal Dember's effect", Proc. SPIE 4749, ICONO 2001: Novel Trends in Nonlinear Laser Spectroscopy and Optical Diagnostics and Lasers in Chemistry, Biophysics, and Biomedicine, (30 May 2002); https://doi.org/10.1117/12.468892
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Nonlinear optics

Silicon

Gold

Semiconductors

Electrons

Reflection

Second-harmonic generation

Back to Top