Delayed emission of surface-generated trapped carriers in transient charge transport of single-crystal and polycrystalline HgI2

Asaf Zuck; Michael M. Schieber; Oleg Khakhan; Zeev Burshtein

doi:10.1117/12.455774

10 January 2003 Delayed emission of surface-generated trapped carriers in transient charge transport of single-crystal and polycrystalline HgI₂

Asaf Zuck, Michael M. Schieber, Oleg Khakhan, Zeev Burshtein

Author Affiliations +

Proceedings Volume 4784, X-Ray and Gamma-Ray Detectors and Applications IV; (2003) https://doi.org/10.1117/12.455774
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Transient charge transport (TCT) measurements were used to evaluate the electrical conduction properties of HgI₂ single crystals. Some comparative preliminary results for polycrystalline mercuric iodide (poly-HgI₂) thick-film X-ray detectors are also reported. The latter were prepared by physical vapor deposition (PVD). The mobility , trapping time 2, and surface recombination velocity s of electrons or holes were determined by analyses of transient voltages developed across the sample in response to a drift of the corresponding charge carriers created by alpha particle absorption near one of the electrodes. Electron-, and hole mobilities of single crystal HgI₂ were _n = 80 cm²/V•s and p = 4.8 cm²/V•s, respectively. Trapping times were 2n ≅ 22 V and 2_p ≅ 8 V, and surface recombination velocities s_n ≅ 1.1 ×10⁵ cm/s and s_p ≅ 3.6 ×10³ cm/s . Those of the polycrystalline material depend on the deposition technology, and vary between 65 and 88 cm²/V•s for electrons, and between 4.3 and 4.1 cm²/V•s for holes. Bulk trapping-times and surface recombination velocities appear of the same order of magnitude as in the single crystal. An effect of carriers being first generated in near-surface traps and then gradually released is observed for both the single crystal and the polycrystalline material. It is stronger for electrons as compared to holes, and stronger in the polycrystalline material as compared to the single crystal.

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Asaf Zuck, Michael M. Schieber, Oleg Khakhan, and Zeev Burshtein "Delayed emission of surface-generated trapped carriers in transient charge transport of single-crystal and polycrystalline HgI₂", Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); https://doi.org/10.1117/12.455774

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