HPVB- and HPVZM-shaped growth of CdZnTe, CdSe, and ZnSe crystals

Nikolai N. Kolesnikov; Ralph B. James; Nadejda S. Berzigiarova; Mihail P. Kulakov

doi:10.1117/12.450814

10 January 2003 HPVB and HPVZM shaped growth of CdZnTe, CdSe, and ZnSe crystals

Nikolai N. Kolesnikov, Ralph B. James, Nadejda S. Berzigiarova, Mihail P. Kulakov

Proceedings Volume 4784, X-Ray and Gamma-Ray Detectors and Applications IV; (2003) https://doi.org/10.1117/12.450814
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

High-pressure Bridgman (HPVB) and vertical zone melting (HPVZM) growth has been applied for manufacturing Cd_1-xZn_xTe (x = 0.04 - 0.2), CdSe and ZnSe crystal tapes with sizes up to 120×120×12 mm. The influence of the technological parameters of the growth process on the crystal quality and some properties is discussed. The dependence of the inclusion (bubbles) content on deviation from the melt stoichiometry is determined. The method for growing plates with low content of the inclusions is described. High-resistivity crystal tapes of undoped CdZnTe (10¹⁰ Ohm×cm), CdSe (10¹¹ Ohm×cm) and ZnSe (>10¹¹ Ohm×cm) were prepared. Possibility of the tape growth on the oriented seed is shown on example of CdSe. The difference between HPVB and HPVZM results is described. Main HPVZM advantage for II-VI compound crystal growth is possibility of obtaining crystals with stoichiometric composition or with controlled deviation from stoichiometry. Hence HPVZM is preferable for growing high-resistivity II-VI crystals with low inclusion content.

Citation Download Citation

Nikolai N. Kolesnikov, Ralph B. James, Nadejda S. Berzigiarova, and Mihail P. Kulakov "HPVB and HPVZM shaped growth of CdZnTe, CdSe, and ZnSe crystals", Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); https://doi.org/10.1117/12.450814

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