p-i-n CdTe 128-pixel detector for gamma-ray imaging fabricated by excimer laser processing

Toru Aoki; Atsushi Nakamura; Madan Niraula; Yasuhiro Tomita; Yoshinori Hatanaka

doi:10.1117/12.455777

10 January 2003 p-i-n CdTe 128-pixel detector for gamma-ray imaging fabricated by excimer laser processing

Toru Aoki, Atsushi Nakamura, Madan Niraula, Yasuhiro Tomita, Yoshinori Hatanaka

Proceedings Volume 4784, X-Ray and Gamma-Ray Detectors and Applications IV; (2003) https://doi.org/10.1117/12.455777
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

A 128-pixel gamma-ray imaging detector unit, which has high-energy resolution with room temperature operation, was fabricated by using diode-type CdTe detector. The diode structure was prepared by indium-doped n-type CdTe thin layer formed by excimer laser doping on one-side of high resistivity p-like single crystal CdTe wafer, and gold electrode as a Shottkey electrode evaporated on opposite side of the wafer. This diode-detectors showed good diode I-V characteristics with low leakage current. This CdTe detectors were pixelized in the 2mm × 2mm, and the 128 chips (32 × 4 chips) were mounted on the ceramic printed circuit boards at 3mm interval with 1mm gap. The printed circuit boards are directly connected with the MCSA-EX1 ASIC chip and 128 ch radiation spectrum analyzer systems. When using the Am-241 and the Co-57 as radioisotopes, the spectral response from all pixels had within 4.4 keV of FWHM at 122 keV peak of Co-57 for radiation performed at room temperature. The intensities of the peak from pixels were also uniform.

Citation Download Citation

Toru Aoki, Atsushi Nakamura, Madan Niraula, Yasuhiro Tomita, and Yoshinori Hatanaka "p-i-n CdTe 128-pixel detector for gamma-ray imaging fabricated by excimer laser processing", Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); https://doi.org/10.1117/12.455777

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