Paper
24 June 2002 Generalized ellipsometry of complex mediums in layered systems
Mathias Schubert, Alexander Kasic, Tino Hofmann, Volker Gottschalch, Juergen Off, Ferdinand Scholz, Eva Schubert, Horst Neumann, Ian J. Hodgkinson, Matthew D. Arnold, Wayne A. Dollase, Craig M. Herzinger
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Abstract
A new global approach, called 'Generalized Ellipsometry', is now capable to characterize the optical and structural properties of general anisotropic layered systems, including absorption, and can be applied, in general, to determine the linear response tensor elements for wavelengths from the far IR to the deep UV. This technique enables new insights into physical phenomena of layered anisotropic mediums, and can provide precise structural and optical data of novel compound materials. Experimental results are presented for stibnite single crystals as example for an arbitrary biaxial absorbing material, a wurtzite GaN thin film with uniaxial anisotropy grown on sapphire, a spontaneously atomically ordered III-V semiconductor alloy thin film, and a sculptured titanium dioxide film with symmetrically dielectric tensor properties.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mathias Schubert, Alexander Kasic, Tino Hofmann, Volker Gottschalch, Juergen Off, Ferdinand Scholz, Eva Schubert, Horst Neumann, Ian J. Hodgkinson, Matthew D. Arnold, Wayne A. Dollase, and Craig M. Herzinger "Generalized ellipsometry of complex mediums in layered systems", Proc. SPIE 4806, Complex Mediums III: Beyond Linear Isotropic Dielectrics, (24 June 2002); https://doi.org/10.1117/12.472993
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Cited by 12 scholarly publications.
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KEYWORDS
Ellipsometry

Dielectrics

Picosecond phenomena

Data modeling

Crystals

Gallium nitride

Thin films

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