Thermoelectric power of Pr0.5Sr0.5MnO3 with Ru substitution at the Mn site

Jun Sung Kim; Dong Chul Kim; G. C. McIntosh; B. J. Kim; Y. C. Kim; A. Maignan; Bernard Raveau; YungWoo Park

doi:10.1117/12.455504

7 November 2002 Thermoelectric power of Pr_0.5Sr_0.5MnO₃ with Ru substitution at the Mn site

Jun Sung Kim, Dong Chul Kim, G. C. McIntosh, B. J. Kim, Y. C. Kim, A. Maignan, Bernard Raveau, YungWoo Park

Proceedings Volume 4811, Superconducting and Related Oxides: Physics and Nanoengineering V; (2002) https://doi.org/10.1117/12.455504
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Thermoelectric power(TEP) mesurement has been carried out on the series of Pr_0.5Sr_0.5Mn_1-xRu_xO₃ (0.0 ≤ x ≤ 0.1) under zero and 6 tesla magnetic fields. In Pr_0.5Sr_0.5MnO₃, a large negative peak of TEP was observed below the ferromagnetic(FM) to antiferromagnetic(AFM) transition temperature, T_N ~ 165K. Under H = 6 tesla, the magnitude of the negative TEP peak is slightly reduced with decrease of T_N down to 105K. For Mn-site doped samples with Ru, however, the negative TEP peak is drasically suppressed by only 2% of Ru doping and completely disappears with further Ru doping. This indicates that the FM metallic state is induced more strongly by Ru substitution than by the magnetic field. In the paramagnetic(PM) regime above the Curie temperature, T_C, it was found that TEP as well as resistivity for Pr_0.5Sr_0.5Mn_1-xRu_xO₃ can be described by the polaronic transport mechanism. The systematic changes of TEP in the PM regime with variation of Ru concentration is discussed in relation to the effects of Ru doping at Mn sites which extends the FM phase at low temperatures and increases T_C similarly to the application of magnetic field.

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Jun Sung Kim, Dong Chul Kim, G. C. McIntosh, B. J. Kim, Y. C. Kim, A. Maignan, Bernard Raveau, and YungWoo Park "Thermoelectric power of Pr_0.5Sr_0.5MnO₃ with Ru substitution at the Mn site", Proc. SPIE 4811, Superconducting and Related Oxides: Physics and Nanoengineering V, (7 November 2002); https://doi.org/10.1117/12.455504

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